Ma y 20 11
FDD6685
30V P-Channel PowerTrench ? MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 25V).
Features
? –40 A, –30 V. R DS(ON) = 20 m ? @ V GS = –10 V
R DS(ON) = 30 m ? @ V GS = –4.5 V
? Fast switching speed
? High performance trench technology for extremely
low R DS(ON)
? High power and current handling capability
? Qualified to AEC Q101
S
D
G
S
TO-252
G
D
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
– 30
± 25
Units
V
V
I D
Continuous Drain Current @T C =25°C
(Note 3)
– 40
@T A =25°C (Note 1a)
Pulsed, PW ≤ 100μs (Note 1b)
– 11
– 100
A
P D
Power Dissipation for Single Operation
(Note 1)
52
W
(Note 1a)
(Note 1b)
3.8
1.6
T J , T STG
Operating and Storage Junction Temperature Range
– 55 to +175
° C
Thermal Characteristics
R θ JC
R θ JA
R θ JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1)
(Note 1a)
(Note 1b)
2.9
40
96
° C/W
° C/W
° C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry.
For a copy of the requirements, see AEC Q101 at http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
? 20 11 Fairchild Semiconductor Corporation
FDD6685 Rev D 1
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相关代理商/技术参数
FDD6685 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDD6685_11 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:30V P-Channel PowerTrench?? MOSFET
FDD6688 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD6688S 功能描述:MOSFET 30V N-CH DPAK POWER TRENCH SYNCFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD6690 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel, Logic Level, PowerTrenchTM MOSFET
FDD6690A 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD6690A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D-PAK
FDD6690A_Q 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube